Title :
Radiation-induced surface leakage currents in silicon microstrip detectors
Author :
Foland, A.D. ; Alexander, J.P. ; Hopman, P.I. ; Kim, P.C. ; Ward, C.W.
Author_Institution :
Lab. of Nucl. Studies, Cornell Univ., Ithaca, NY, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
After exposure to X-rays and UV light, we have observed induced leakage currents in silicon microstrip detectors designed for CLEO III. UV measurements have shown that the damage is confined to the Si-SiO2 interface. The damage is manifested only as a leakage current without additional 1/f noise or significant changes to detector parameters. The damage rate is measured to be 5±1 nA/cm2 /kRad for 20 keV X-rays
Keywords :
X-ray effects; leakage currents; position sensitive particle detectors; silicon radiation detectors; 1/f noise; 20 keV; CLEO III; Si microstrip detectors; Si-SiO2; Si-SiO2 interface; UV light; X-rays; damage rate; radiation-induced surface leakage currents; Aluminum; Implants; Leak detection; Leakage current; Microstrip; Radiation detectors; Silicon radiation detectors; Strips; Testing; X-rays;
Journal_Title :
Nuclear Science, IEEE Transactions on
