Title :
TA-B8 back-illuminated InGaAs/InP p-i-n photodiodes prepared by molecular-beam epitaxy
Author :
Cheng, K.Y. ; Cho, Andrew Y. ; Lee, T.P. ; Burrus, C.A.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Epitaxial growth; Etching; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes; SQUIDs; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20205
