Title :
TA-B7 resonant impact ionization in Ga1-xAlxSb p-i-n avalanche photodiodes
Author :
Hildebrand, O. ; Kuebart, W. ; Lutz, Josef ; Pilkuhn, M.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Impact ionization; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes; Resonance; SQUIDs; Semiconductor diodes; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20206
