TP-A2 the cleft process: A technique for producing many epitaxial single-crystal GaAs films by employing one reusable substrate

Author

McClelland, R.W. ; Bozler, C.O. ; Fan, J.C.C.

Volume

Issue

fYear

1980

fDate

11/1/1980 12:00:00 AM

Firstpage

2188

Lastpage

2188

Keywords

Epitaxial growth; Gallium arsenide; Glass; Laboratories; Resists; Semiconductor films; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1980.20208

Filename

1481001

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