Title :
TP-A3 capless annealing of GaAs using a controlled excess as vapor pressure source
Author :
Rupprecht, H. ; Woodall, J.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Annealing; Gallium arsenide; Impurities; Ohmic contacts; Optical surface waves; Pressure control; Semiconductor device doping; Semiconductor lasers; Surface emitting lasers; Thermal decomposition;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20211
