DocumentCode
1071180
Title
TP-A3 capless annealing of GaAs using a controlled excess as vapor pressure source
Author
Rupprecht, H. ; Woodall, J.
Volume
27
Issue
11
fYear
1980
fDate
11/1/1980 12:00:00 AM
Firstpage
2189
Lastpage
2189
Keywords
Annealing; Gallium arsenide; Impurities; Ohmic contacts; Optical surface waves; Pressure control; Semiconductor device doping; Semiconductor lasers; Surface emitting lasers; Thermal decomposition;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20211
Filename
1481004
Link To Document