Title :
TP-A6 the behavior of Schottky barriers to GaAs as a function of annealing temperature
Author :
Hovel, H.J. ; Lanza, C.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Annealing; Crystallization; Gallium arsenide; Molecular beam epitaxial growth; Schottky barriers; Silicides; Silicon; Substrates; Temperature; Tungsten;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20213
