DocumentCode :
1071301
Title :
WA-A1 functional integration of bipolar and MOS structures
Author :
Tihanyi, J.
Volume :
27
Issue :
11
fYear :
1980
fDate :
11/1/1980 12:00:00 AM
Firstpage :
2193
Lastpage :
2193
Keywords :
Annealing; Delay effects; FETs; Impurities; Ion implantation; MOS devices; MOSFET circuits; Solid state circuits; Switches; Thyristors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20223
Filename :
1481016
Link To Document :
بازگشت