WA-B2 Monolithic amplifiers and FET´s formed by direct selected area, ion implantation into undoped and Chromium-doped Gallium Arsenide substrates

Author

Driver, M.C. ; Wang, S.K. ; Oakes, J.G. ; Eldridge, G.W. ; Wrick, V.L. ; Wickstrom, R.A.

Volume

Issue

fYear

1980

fDate

11/1/1980 12:00:00 AM

Firstpage

2196

Lastpage

2196

Keywords

Contracts; Driver circuits; FETs; Gallium arsenide; Implants; Ion implantation; MESFETs; Power amplifiers; Research and development; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1980.20229

Filename

1481022

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