مرکز منطقه ای اطلاع رساني علوم و فناوري - WA-B2 Monolithic amplifiers and FET´s formed by direct selected area, ion implantation into undoped and Chromium-doped Gallium Arsenide substrates

DocumentCode :

1071350

Title :

WA-B2 Monolithic amplifiers and FET´s formed by direct selected area, ion implantation into undoped and Chromium-doped Gallium Arsenide substrates

Author :

Driver, M.C. ; Wang, S.K. ; Oakes, J.G. ; Eldridge, G.W. ; Wrick, V.L. ; Wickstrom, R.A.

Volume :

Issue :

fYear :

1980

fDate :

11/1/1980 12:00:00 AM

Firstpage :

2196

Lastpage :

2196

Keywords :

Contracts; Driver circuits; FETs; Gallium arsenide; Implants; Ion implantation; MESFETs; Power amplifiers; Research and development; Voltage;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1980.20229

Filename :

1481022

Link To Document :