DocumentCode :
1071391
Title :
On the use of silicon photonics--Part I
Author :
Sayil, Selahattin
Author_Institution :
Lamar Univ., Beaumont, TX
Volume :
28
Issue :
1
fYear :
2009
Firstpage :
35
Lastpage :
39
Abstract :
As today´s complementary metal oxide semiconductor (CMOS) technologies are scaled down to below 65 nm, conventional metal lines carrying signals in an integrated circuit face increasing challenges. As a short-term solution, the semiconductor industry adopted copper instead of aluminum for interconnects due to its low resistive behavior and good electromigration property. However, issues such as delay degradation, interference, and power dissipation will remain for metal interconnects as we further scale down feature sizes.
Keywords :
CMOS integrated circuits; integrated optics; semiconductor industry; silicon; complementary metal oxide semiconductor; semiconductor industry; silicon photonics; Aluminum; CMOS integrated circuits; CMOS technology; Copper; Electromigration; Electronics industry; Integrated circuit interconnections; Integrated circuit technology; Photonic integrated circuits; Silicon;
fLanguage :
English
Journal_Title :
Potentials, IEEE
Publisher :
ieee
ISSN :
0278-6648
Type :
jour
DOI :
10.1109/MPOT.2008.931160
Filename :
4752879
Link To Document :
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