Title :
WP-A2 Micro-meter gate-length MESFET´s on laser-annealed PolySilicon
Author :
Barnard, J. ; Frey, Jesse ; Lee, K.F. ; Gibbons, J.F.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Aluminum; Annealing; Argon; Electron mobility; Grain size; Insulation; MESFET integrated circuits; Optical device fabrication; Optical materials; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20235
