DocumentCode

1071431

Title

WP-A2 Micro-meter gate-length MESFET´s on laser-annealed PolySilicon

Author

Barnard, J. ; Frey, Jesse ; Lee, K.F. ; Gibbons, J.F.

Volume

27

Issue

11

fYear

1980

fDate

11/1/1980 12:00:00 AM

Firstpage

2198

Lastpage

2198

Keywords

Aluminum; Annealing; Argon; Electron mobility; Grain size; Insulation; MESFET integrated circuits; Optical device fabrication; Optical materials; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1980.20235

Filename

1481028