DocumentCode :
1071644
Title :
Design of Low-Voltage Highly Linear Switched-R-MOSFET-C Filters
Author :
Kurahashi, Peter ; Hanumolu, Pavan Kumar ; Temes, Gabor C. ; Moon, Un-Ku
Author_Institution :
Oregon State Univ., Corvallis
Volume :
42
Issue :
8
fYear :
2007
Firstpage :
1699
Lastpage :
1709
Abstract :
This paper discusses the design, analysis and performance of a low-voltage, highly linear switched-R-MOSFET-C filter. High linearity, even at a low supply voltage, is achieved through the use of duty-cycle-controlled tuning. Tuning MOSFETs are switched completely on while conducting, such that their nonlinear resistance is much smaller than the linear filter resistors, resulting in low distortion. The MOSFETs are also placed inside the filter feedback loop which further reduces distortion. Because tuning is done in the time domain, rather than in the voltage domain, the tuning range is independent of the supply voltage. The filter achieves -77 dB total harmonic distortion (THD) using a 0.6-V supply, and -90 dB THD using a 0.8-V supply, with a 0.6-Vpp differential 2 kHz sine input. The prototype IC, implemented in a 0.18-mum CMOS process, occupies an area of 0.7 mm2 and consumes 1 mW of power from a 0.6-V supply.
Keywords :
CMOS analogue integrated circuits; active filters; operational amplifiers; CMOS process; duty-cycle-controlled tuning; low supply voltage; power 1 mW; size 0.18 micron; switched-R-MOSFET-C filter; total harmonic distortion; voltage 0.6 V; voltage 0.8 V; CMOS integrated circuits; Feedback loop; Linearity; Low voltage; MOSFETs; Nonlinear filters; Performance analysis; Prototypes; Resistors; Total harmonic distortion; R-MOSFET-C; Duty cycle control; linear; low voltage; master– slave tuning; pulse width modulation; switched filters; tunable filters;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2007.900280
Filename :
4277868
Link To Document :
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