DocumentCode
1071679
Title
IMMA applications to ion implantation in silicon-on-sapphire
Author
Pancholy, Ranjeet K. ; Young, Michael Yu-Tak
Author_Institution
Hughes Aircraft Company, Newport Beach, CA
Volume
27
Issue
12
fYear
1980
fDate
12/1/1980 12:00:00 AM
Firstpage
2256
Lastpage
2261
Abstract
Application of ion-microprobe mass analysis (IMMA) technique for the characterization of the silicon-on-sapphire (SOS) epitaxial layers and ion implantation in SOS axe described. A significantly high level of aluminum and oxygen concentration was observed in the thin (O.5-µm) epitaxial film. Ion-implant profiles of boron and phosphorus before and after high-temperature activation and oxidation procedures commonly used in SOS fabrication process are characterized and correlated to SUPREM calculations, spreading resistance, and resistivity measurements.
Keywords
Aluminum; Boron; Conductivity measurement; Epitaxial layers; Fabrication; Ion implantation; Oxidation;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20261
Filename
1481053
Link To Document