DocumentCode :
1071690
Title :
Correction of differential capacitance profiles for Debye-length effects
Author :
Wilson, Charles L.
Author_Institution :
National Bureau of Standards, Washington, DC
Volume :
27
Issue :
12
fYear :
1980
fDate :
12/1/1980 12:00:00 AM
Firstpage :
2262
Lastpage :
2267
Abstract :
Conventional differential capacitance-voltage ( C-V ) profiling methods are limited in resolution by the method used to convert C-V data to profile data. A new method of numerical calculation of C-V data, using cubic finite elements, is presented which allows a more exact relationship between C-V data and profile data to be calculated. This new method of data reduction allows the resolution of differential C-V profiling method to be extended to dimensions near the local extrinsic Debye length.
Keywords :
Capacitance; Capacitance-voltage characteristics; Charge carrier density; Data analysis; Electrostatic measurements; Finite element methods; Impurities; Length measurement; Semiconductor diodes; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20262
Filename :
1481054
Link To Document :
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