• DocumentCode
    1071727
  • Title

    Magnetoresistance mobility profiling of MESFET channels

  • Author

    Sites, James R. ; Wieder, H.H.

  • Author_Institution
    Naval Ocean Systems Center, San Diego, CA
  • Volume
    27
  • Issue
    12
  • fYear
    1980
  • fDate
    12/1/1980 12:00:00 AM
  • Firstpage
    2277
  • Lastpage
    2281
  • Abstract
    Magnetoresistance provides an alternative, nondestructive technique for determining the carrier mobility in the conducting channel of field-effect transistors (FET´s) over their full range of operation. The analysis is well suited to the typical FET geometry. The technique is illustrated here by a comparative study of GaAs depletion-mode FET devices.
  • Keywords
    Conductivity; Epitaxial layers; Etching; FETs; Fabrication; Gallium arsenide; MESFETs; Magnetoresistance; Sea measurements; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20265
  • Filename
    1481057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1071727