• DocumentCode
    1071739
  • Title

    Evaluation of n-GaAs polycrystalline layers for solar cells using an electrochemical technique

  • Author

    Weiner, Albert S. ; Reep, Douglas H. ; Shastry, Shambu K. ; Bhat, K.N. ; Borrego, Jose M. ; Ghandhi, Sorab K.

  • Author_Institution
    Rensselaer Polytechnic Institute, Troy, NY
  • Volume
    27
  • Issue
    12
  • fYear
    1980
  • fDate
    12/1/1980 12:00:00 AM
  • Firstpage
    2281
  • Lastpage
    2285
  • Abstract
    Thin layers of n-GaAs polycrystalline material grown by metalorganic CVD have been evaluated using an electrochemical technique. The technique is based upon an analysis of the time behavior of the anodizing current and it is capable of giving spatial information about the breakdown voltage of the material. A correlation has been established between the percentage of area with low breakdown voltage and the efficiency of solar cells fabricated on the polycrystalline layers.
  • Keywords
    Breakdown voltage; Circuits; Crystalline materials; Doping; Gallium arsenide; Grain boundaries; Information analysis; Inorganic materials; Oxidation; Photovoltaic cells;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20266
  • Filename
    1481058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1071739