DocumentCode
1071866
Title
Discussion of the relaxation oscillation frequency in Ga(Al)As quantum well laser structures
Author
Hochholzer, M. ; Harth, W.
Author_Institution
Lehrstuhl fur Allgemeine Elektron., Tech. Univ. Munchen, Germany
Volume
142
Issue
5
fYear
1995
fDate
10/1/1995 12:00:00 AM
Firstpage
232
Lastpage
236
Abstract
The dependence of the relaxation oscillation frequency on the main laser device parameters as the number of quantum wells, well width, threshold modal gain and optical confinement is systematically investigated in GaAs/GaAlAs multiquantum well laser structures. The theoretical results are well confirmed by detailed measurements on ridge waveguide laser structures
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; laser theory; optical waveguide theory; quantum well lasers; ridge waveguides; waveguide lasers; Ga(Al)As quantum well laser structures; GaAs-AlGaAs; GaAs/GaAlAs multiquantum well laser structures; main laser device parameters; optical confinement; quantum well width; relaxation oscillation frequency; ridge waveguide laser structures; threshold modal gain;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:19952183
Filename
475295
Link To Document