• DocumentCode
    1071887
  • Title

    Improved performance of implanted n+-p Hg1-xCdxTe photodiodes using insulated field plates

  • Author

    Sood, A.K. ; Tobin, S.P.

  • Author_Institution
    Honeywell Electro-Optics Center, Lexington, MA
  • Volume
    1
  • Issue
    1
  • fYear
    1980
  • fDate
    1/1/1980 12:00:00 AM
  • Firstpage
    12
  • Lastpage
    14
  • Abstract
    Using insulated field plates, we have demonstrated that surface leakage had been limiting the RoA of our ion-implanted n+ -on-p (Hg, Cd) Te photodiodes. This leakage is believed to be tunneling current across a pinched-off depletion region at the surface. We have used gated diodes to eliminate leakage and improve RoA to the diffusion limit at 77°K for Hg0.8Cd0.2Te photodiodes.
  • Keywords
    Fabrication; Infrared detectors; Leakage current; Notice of Violation; Photodiodes; Physics; Silicon; Temperature dependence; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25209
  • Filename
    1481071
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1071887