• DocumentCode
    1071992
  • Title

    Large Exchange Bias and High Blocking Temperature of MgO-Barrier-MTJs With L12-Ordered Mn3Ir

  • Author

    Komagaki, Koujiro ; Yamada, Kouji ; Noma, Kenji ; Kanai, Hitoshi ; Kobayashi, Kazuo ; Uehara, Yuji ; Tsunoda, Masakiyo ; Takahashi, Migaku

  • Author_Institution
    Fujitsu Ltd., Nagano
  • Volume
    43
  • Issue
    8
  • fYear
    2007
  • Firstpage
    3535
  • Lastpage
    3537
  • Abstract
    We examined the magnetic properties of CoFeB/MgO/CoFeB based magnetic tunnel junctions (MTJs) with L12(ordered)-Mn3Ir or gamma(disordered)-Mn75Ir25 as an antiferromagnetic (AFM) layer. Both of them showed tunnel magnetoresistance (TMR) ratio of about 160% after 350degC annealing. The exchange bias field (Hex) of the MTJs with L12-Mn3 Iris significantly larger than that with gamma-MnIr. The blocking temperature (TB) of the MTJ film with L12-Mn3Ir is about 50degC higher than that with gamma-MnIr. These results prove that L12-Mn3Ir is a great candidate as AFM in MgO-barrier-MTJs and makes them improve in exchange bias properties.
  • Keywords
    annealing; boron alloys; cobalt alloys; exchange interactions (electron); iron alloys; magnesium compounds; magnetic tunnelling; magnetoresistance; tunnelling magnetoresistance; CoFeB-MgO - Interface; antiferromagnetic layer; blocking temperature; exchange bias; magnetic tunnel junctions; tunnel magnetoresistance ratio; Annealing; Antiferromagnetic materials; Iron; Magnetic properties; Magnetic sensors; Magnetic tunneling; Sputtering; Substrates; Temperature sensors; Tunneling magnetoresistance; Blocking temperature; L1$_{2}$(ordered)-Mn$_{3}$Ir; MgO barrier; exchange bias; tunnel junction; tunnel magnetoresistance;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2007.893695
  • Filename
    4277901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1071992