DocumentCode :
1071996
Title :
Graded etching of thermal oxide with various angles using silicafilm
Author :
Choi, Yearn-Ik ; Kwon, Young-Se ; Kim, Choong-ki
Author_Institution :
Korea Advanced Institute of Science, Seoul, Korea
Volume :
1
Issue :
3
fYear :
1980
fDate :
3/1/1980 12:00:00 AM
Firstpage :
30
Lastpage :
31
Abstract :
Reproducible tapered windows in thermal oxide have been produced by depositing a silicafilm on the thermal oxide before the chemical etching. As heat treatment temperatures of silicafilms are changed from 200°C to 1,000°C, graded angles are varied approximately from 3° to 25°.
Keywords :
Equations; Etching; Hafnium; Heat treatment; Interference; Optical buffering; Optical microscopy; Resists; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1980.25219
Filename :
1481081
Link To Document :
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