• DocumentCode
    1072091
  • Title

    Ambipolar transport in double heterostructure injection lasers

  • Author

    Anthony, P.J. ; Schumaker, N.E.

  • Author_Institution
    Bell Laboratories, Murray Hill, New Jersey
  • Volume
    1
  • Issue
    4
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    58
  • Lastpage
    60
  • Abstract
    Ambipolar conduction through the electrical confinement layers is shown to influence the properties of some double heterostructure injection lasers. A model of contact-limited ambipolar conduction is consistent with known material parameters of (Al,Ga)As lasers and explains several anomalies in the measured device electrical characteristics. The portion of current lost to lasing due to poor carrier confinement in the active region of injection lasers may be greater than previously expected.
  • Keywords
    Carrier confinement; Contact resistance; Current measurement; Electric variables; Electric variables measurement; Laser modes; Laser transitions; Loss measurement; Radiative recombination; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25229
  • Filename
    1481091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072091