Title :
A new MOS Type metal tunnel-oxide silicon switch (MOSMISS)
Author_Institution :
University of Western Australia, Nedlands, Western Australia
fDate :
5/1/1980 12:00:00 AM
Abstract :
A new MISS device with MOSFET gating is described. The MISS structure employs the thin tunnel oxide to produce the reverse biased field induced drain junction. The quantum mechanical tunneling allows the passage of current and the device to switch to on or off state.
Keywords :
Electrons; Insulation; MOSFET circuits; Metal-insulator structures; P-n junctions; Quantum mechanics; Silicon; Switches; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25233
