• DocumentCode
    1072129
  • Title

    A new MOS Type metal tunnel-oxide silicon switch (MOSMISS)

  • Author

    Nassibian, A.G.

  • Author_Institution
    University of Western Australia, Nedlands, Western Australia
  • Volume
    1
  • Issue
    5
  • fYear
    1980
  • fDate
    5/1/1980 12:00:00 AM
  • Firstpage
    67
  • Lastpage
    68
  • Abstract
    A new MISS device with MOSFET gating is described. The MISS structure employs the thin tunnel oxide to produce the reverse biased field induced drain junction. The quantum mechanical tunneling allows the passage of current and the device to switch to on or off state.
  • Keywords
    Electrons; Insulation; MOSFET circuits; Metal-insulator structures; P-n junctions; Quantum mechanics; Silicon; Switches; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25233
  • Filename
    1481095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072129