Title :
Leakage Minimization of Digital Circuits Using Gate Sizing in the Presence of Process Variations
Author :
Bhardwaj, Sarvesh ; Vrudhula, Sarma
Author_Institution :
Synopsys, Inc., Mountain View
fDate :
3/1/2008 12:00:00 AM
Abstract :
This paper presents a novel gate-sizing methodology to minimize the leakage power in the presence of process variations. The method is based on modeling the statistics of leakage and delay as posynomials functions to formulate a geometric-programming problem. The existing statistical leakage model is extended to include the variations in gate sizes, as well as systematic variations. Using a simplified delay model, we propose an efficient method to evaluate the alpha-percentile of path delays without enumerating the paths in a circuit. The complexity of evaluating the objective function of the optimization problem is O(|N|2) and that of evaluating the delay constraints is O(|N| + |E|) for a circuit with |N| gates and |E| wires. The optimization problem is then solved using a convex optimization algorithm that gives an exact solution. The statistical optimization methodology is shown to provide as much as 15% reduction in the mean leakage power as compared to traditional worst case gate sizing with the same delay constraints.
Keywords :
CMOS integrated circuits; circuit optimisation; digital integrated circuits; geometric programming; integrated circuit design; leakage currents; low-power electronics; alpha-percentile evaluation; convex optimization algorithm; digital circuits; gate sizing methods; geometric-programming problem; leakage power minimization; optimization problem; posynomials functions; statistical leakage model; Constraint optimization; Delay; Digital circuits; Leakage current; Minimization; Optimization methods; Power engineering and energy; Power system modeling; Semiconductor device modeling; Solid modeling; Circuit optimization; leakage power; process variations;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2008.916341