DocumentCode :
1072141
Title :
Low-Temperature Annealing Effect of RF Inductor With FeNi-SiO2 Granular Film
Author :
Sun, Hongfang ; Liu, Zewen ; Zhao, Jiahao ; Wang, Li ; Zhu, Jing
Author_Institution :
Tsinghua Univ., Beijing
Volume :
43
Issue :
8
fYear :
2007
Firstpage :
3457
Lastpage :
3461
Abstract :
A low-temperature annealing process in vacuum is proposed to enhance the inductance of RF inductors with FeNi-SiO2 magnetic granular films. Due to the great improvement of soft magnetic property in the 200degC and 350degC annealed film, the inductance is enhanced by 9.6% (200degC) and 8.3% (350degC), respectively, compared with the case of as-deposited film inductor. The peak value of quality factor, which is 9.18 for the as-deposited film inductor, is also increased to 9.27 (200degC ) and 12.27 (350degC), respectively.
Keywords :
Q-factor; annealing; granular materials; iron alloys; magnetic thin film devices; nickel alloys; silicon compounds; soft magnetic materials; thin film inductors; FeNi-SiO2 - Interface; RF inductor; inductance; low-temperature annealing effect; magnetic granular films; quality factor; soft magnetic property; temperature 200 degC; temperature 350 degC; Annealing; Coils; Inductance; Inductors; Magnetic cores; Magnetic films; Magnetic materials; Radio frequency; Spirals; Sputtering; ${hbox{FeNi-SiO}}_{2}$; Annealing; film inductor; granular film; quality factor;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2007.898799
Filename :
4277914
Link To Document :
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