DocumentCode :
1072171
Title :
Low cost - high efficiency MIS/inversion layer solar cells
Author :
Thomas, R.E. ; North, R.B. ; Norman, C.E.
Author_Institution :
Carleton University, Ottawa, Canada
Volume :
1
Issue :
5
fYear :
1980
fDate :
5/1/1980 12:00:00 AM
Firstpage :
79
Lastpage :
80
Abstract :
This letter reports the highest total area efficiency (a probable 16% or greater for AM1 conditions) yet achieved for MIS Inversion Layer (I.L.) silicon solar cells. The cells have the MIS-IL structure with the inversion layer contacted by a MIS grid and induced on p-silicon by a spin-on tantalum oxide layer containing some SiO2.
Keywords :
Capacitance-voltage characteristics; Charge measurement; Coatings; Costs; Current measurement; Fabrication; Photovoltaic cells; Silicon; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1980.25237
Filename :
1481099
Link To Document :
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