DocumentCode
1072181
Title
A new photo-sensitive voltage-controlled differential negative resistance device—The lambda bipolar photo-transistor
Author
Wu, Ching-Yuan ; Wu, Chung-Yu ; Sheng, Hong-Dah
Author_Institution
National Chiao-Tung University, Taiwan, Rep. of China
Volume
1
Issue
5
fYear
1980
fDate
5/1/1980 12:00:00 AM
Firstpage
81
Lastpage
82
Abstract
A new photo-sensitive voltage-controlled differential negative resistance device called the LAMBDA bipolar photo-transistor is presented. The basic structure of the Lambda bipolar photo-transistor consists of the simultaneous integration of a bipolar junction transistor and a merged metal-oxide-semiconductor field effect transistor. The IV characteristic of this new device will exhibit a voltage-controlled differential negative resistance when the device is exposed to light. The operational principle of this new device will be described and the characteristics of the fabricated device are discussed.
Keywords
Bipolar transistors; Conductivity; Electric resistance; FETs; MOSFET circuits; Metallization; Optical signal detection; Semiconductor diodes; Substrates; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25238
Filename
1481100
Link To Document