• DocumentCode
    1072449
  • Title

    Corrections to "Degradation of the doping profile of epitaxial GaAs layers due to an ion implantation process"

  • Author

    Tsuji, Takao ; Hasegawa, Fumihiro

  • Author_Institution
    Nippon Electric Company, Ltd., Kawasaki, Japan
  • Volume
    1
  • Issue
    7
  • fYear
    1980
  • fDate
    7/1/1980 12:00:00 AM
  • Firstpage
    140
  • Lastpage
    140
  • Abstract
    Corrections are made to the text on page 112, colum 2, line 18 from top, and page 113, column 1, line 4 from top.
  • Keywords
    Degradation; Doping profiles; Electron devices; Gallium arsenide; Ion implantation; Plasma devices; Plasma immersion ion implantation;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25263
  • Filename
    1481125
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072449