Electrical and Interfacial Characterization of Atomic Layer Deposited High- κ Gate Dielectrics on GaAs for Advanced CMOS Devices

Author

Dalapati, Goutam Kumar ; Tong, Yi ; Loh, Wei-Yip ; Mun, Hoe Keat ; Cho, Byung Jin

Author_Institution

Nat. Univ. of Singapore, Singapore

Volume

54

Issue

8

fYear

2007

Firstpage

1831

Lastpage

1837

Abstract

In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al₂O₃, HfO₂, and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over Al₂O₃ or HfO₂ on GaAs, and it is attributed to the reduction of the Ga-O formation at the interfacial layer. HfAlO on p-type GaAs exhibits the best electrical properties after postdeposition annealing (PDA) at 500degC. It is found that PDA, at above 500degC, causes a significant amount of Ga and As out-diffusion into the high-k dielectric, which degrades the interface, as well as bulk high-k properties.

Keywords

CMOS logic circuits; III-V semiconductors; MOS capacitors; aluminium compounds; atomic layer deposition; gallium arsenide; hafnium compounds; high-k dielectric thin films; passivation; Al₂O₃ - Interface; GaAs - Surface; HfAlO - Interface; HfO₂ - Interface; MOS capacitors; advanced CMOS devices; atomic layer deposition; electrical properties; high-k gate dielectrics; interfacial properties; postdeposition annealing; Annealing; Atomic layer deposition; Degradation; Dielectric devices; Dielectric substrates; Gallium arsenide; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Atomic layer deposition (ALD); GaAs MOS; frequency dispersion; high-$kappa$ dielectric; interface trap; surface passivation; thermal stability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.901261

Filename

4277955