Title :
P-type anode structure for GaAs TEDs on semi-insulating substrate
Author :
Kurumada, Katsuhiko ; Asai, Kazuyoshi ; Ishii, Yasunobu
Author_Institution :
Musashino Electrical Communication Laboratory, Tokyo, Japan
fDate :
9/1/1980 12:00:00 AM
Abstract :
The use of a p-type anode in a planar GaAs Gunn device was studied for the first time. The undesirable decrease of current for dc bias, compared with pulsed bias, is eliminated by hole injection to the overcritically doped n-layer from a p-n junction anode. These devices have exhibited satisfactory Gunn domain operation for triggered dc operation.
Keywords :
Anodes; Buffer layers; Cathodes; Electrodes; Electron traps; Gallium arsenide; Gunn devices; Interface phenomena; P-n junctions; Space charge;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25275
