Title :
Comments on "A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region"
Author :
Gildenblat, G. ; Klaassen, D.B.M. ; McAndrew, C.C.
Author_Institution :
Arizona State Univ, Tempe
Abstract :
This paper points out inaccuracies and improper attribution to previous publications in the above paper by J. He (see ibid., vol.53, no.9, p.2008-16, Sep 2006).
Keywords :
MOSFET; semiconductor device models; MOSFET surface potential; accumulation region; physics-based analytic solution; strong-inversion region; Approximation methods; Electric potential; Equations; Integrated circuit modeling; MOSFET circuits; Mathematical model;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.900842
