DocumentCode
1072616
Title
Amorphous-silicon image sensor IC
Author
Matsumura, M. ; Hayama, H. ; Nara, Y. ; Ishibashi, K.
Author_Institution
Tokyo Institute of Technology, Tokyo, Japan
Volume
1
Issue
9
fYear
1980
fDate
9/1/1980 12:00:00 AM
Firstpage
182
Lastpage
184
Abstract
A novel amorphous-silicon image sensor IC is proposed in this letter. The unit cell consists of an amorphous-silicon field effect transistor, an amorphous-silicon photoconductor and an MOS capacitor. The fundamental properties of the cell are investigated and operation of a prototype integrated 8-bits linear array is described.
Keywords
Clocks; FET integrated circuits; Image sensors; Lighting; MOS capacitors; Optical arrays; Optical films; Photoconductivity; Prototypes; Space vector pulse width modulation;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25280
Filename
1481142
Link To Document