GaN resonant cavity light-emitting diodes for plastic optical fiber applications

Author

Shaw, A.J. ; Bradley, A.L. ; Donegan, J.F. ; Lunney, J.G.

Author_Institution

Phys. Dept., Trinity Coll., Dublin, Ireland

Volume

16

Issue

9

fYear

2004

Firstpage

2006

Lastpage

2008

Abstract

The optical designs of resonant GaN light-emitting diodes (LEDs) have been determined for maximum extraction efficiency into typical plastic optical fiber of numerical aperture 0.5. An optimum extraction efficiency of 3.9% can be achieved for a practical resonant cavity LED (RCLED), taking account of current growth and processing considerations. The optimized device is a metal-active layer distributed Bragg reflector construction. Constructive interference effects from the top metal mirror are found to play the dominant role in efficiency enhancement. The extraction efficiency of an optimized resonant single-mirror LED is found to be 3.3%, indicating a small compromise in performance compared with the more complex RCLED structure.

Keywords

III-V semiconductors; distributed Bragg reflectors; gallium compounds; integrated optics; laser cavity resonators; light emitting diodes; optical design techniques; optical fibres; optical polymers; 3.3 percent; 3.9 percent; GaN; GaN resonant cavity LED; constructive interference effects; distributed Bragg reflector; light emitting diodes; metal mirror; metal-active layer; optical designs; plastic optical fiber; resonant cavity enhancement; resonant single-mirror LED; Apertures; Distributed Bragg reflectors; Gallium nitride; Interference; Light emitting diodes; Optical design; Optical fiber applications; Optical fibers; Plastics; Resonance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.833116

Filename

1325214