Title :
Lateral MIS tunnel transistor
Author_Institution :
Pennsylvania State University, University Park, PA
fDate :
10/1/1980 12:00:00 AM
Abstract :
A new device structure called the Lateral MIS Tunnel Transistor (LMISTT) is proposed, and its basic features and characteristics are presented. In this device, effects related to the lateral conduction in MIS tunnel structures are implemented. The device is featured by very simple processing, and shows promise in a variety of applications, including very large scale integration high speed IC´s.
Keywords :
Bipolar transistors; Doping; Electrodes; Electrons; Fabrication; Polarization; Silicon; Testing; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25287
