• DocumentCode
    1072686
  • Title

    Evidence of space-charge-limited current in amorphous silicon Schottky diodes

  • Author

    Ashok, S. ; Lester, A. ; Fonash, S.J.

  • Author_Institution
    Pennsylvania State University, University Park, PA
  • Volume
    1
  • Issue
    10
  • fYear
    1980
  • fDate
    10/1/1980 12:00:00 AM
  • Firstpage
    200
  • Lastpage
    202
  • Abstract
    Palladium/amorphous silicon (a-SiHx) Schottky barrier diodes have been found to exhibit superlinear dark forward current-voltage (I-V) characteristics over the temperature range 30 to 130°C. The results are consistent with expected behavior for space-charge-limited current in the presence of distributed traps. The trap parameters are deduced from I-V data.
  • Keywords
    Amorphous materials; Amorphous silicon; Conductivity; Electron traps; Hydrogen; Photovoltaic cells; Schottky barriers; Schottky diodes; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25288
  • Filename
    1481150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072686