A Trench-Gate High-Conductivity IGBT (HiGT) With Short-Circuit Capability

Author

Mori, Mutsuhiro ; Oyama, Kazuhiro ; Kohno, Yasuhiko ; Sakano, Junichi ; Uruno, Junpei ; Ishizaka, Katsuo ; Kawase, Daisuke

Author_Institution

Hitachi Ltd., Ibaraki

Volume

54

Issue

8

fYear

2007

Firstpage

2011

Lastpage

2016

Abstract

This paper describes a new 600-V trench-gate high-conductivity insulated gate bipolar transistor (trench HiGT) that has both a low collector-emitter saturation voltage of 1.55 V at 200 and a tough short-circuit capability of more than 10 . The trench HiGT also has better tradeoff relationship between turn-off switching loss and collector-emitter saturation voltage compared to either an insulated gate bipolar transistor (IGBT) with a planar gate or a conventional trench gate. A reverse transfer capacitance that is 50% lower than that of the planar-gate IGBT and an input capacitance that is 40% lower than that of a conventional trench gate IGBT have been obtained for the trench HiGT.

Keywords

insulated gate bipolar transistors; collector-emitter saturation voltage; insulated gate bipolar transistor; reverse transfer capacitance; short-circuit capability; trench-gate high-conductivity IGBT; turn-off switching loss; Bipolar transistors; Capacitance; Current density; Electric variables; Electrodes; Insulated gate bipolar transistors; Inverters; Low voltage; Power supplies; Switching loss; Collector–emitter saturation voltage; insulated gate bipolar transistor (IGBT); short-circuit capability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.900007

Filename

4277969