DocumentCode
1072772
Title
50-110 GHz Gunn diodes using molecular beam epitaxy
Author
Haydl, William H. ; Smith, Robin S. ; Bosch, Roland
Author_Institution
Institut für Angewandte Festkörperphysik der Fraunhofergesellschaft, Freiburg, West Germany
Volume
1
Issue
10
fYear
1980
fDate
10/1/1980 12:00:00 AM
Firstpage
224
Lastpage
226
Abstract
Millimeterwave Gunn-oscillators have for the first time been fabricated using gallium arsenide grown by molecular beam epitaxy. Material produced by this new method of epitaxy has yielded c.w. integral heat sink oscillators with up to 20 mW of r.f. power at 90 GHz, 10 mW at 100 GHz, and 4 mW at 110 GHz. These results are comparable with those obtained from devices using gallium arsenide grown by other techniques such as vapor- or liquid-phase epitaxy.
Keywords
Diodes; Doping; Epitaxial growth; Gallium arsenide; Gold; Gunn devices; Molecular beam epitaxial growth; Sputter etching; Substrates; Tin;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25296
Filename
1481158
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