DocumentCode
1072835
Title
High-efficiency stripe-geometry InGaAsP DH lasers (λ = 1.3 µm) with chemically-etched mirrors
Author
Wright, P.D. ; Nelson, R.J.
Author_Institution
Bell Laboratories, Murray Hill, NJ, USA
Volume
1
Issue
11
fYear
1980
fDate
11/1/1980 12:00:00 AM
Firstpage
242
Lastpage
243
Abstract
Stripe-geometry InGaAsP double heterojunction lasers with chemically-etched mirrors have been fabricated. External differential quantum efficiencies as high as ∼ 30% have been obtained for devices with two chemically-etched mirrors. Etched-mirror lasers with 25 µm wide stripes have threshold currents as low as 210mA (room-temperature, pulsed). The etched-mirror lasers are compared to cleaved-mirror devices prepared from the same wafer.
Keywords
Chemical lasers; DH-HEMTs; Etching; Heterojunctions; Laser modes; Lasers and electrooptics; Mirrors; Optical device fabrication; Scanning electron microscopy; Threshold current;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25303
Filename
1481165
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