Effect of Dead Space on Low-Field Avalanche Multiplication in InP

Author

Tan, L.J.J. ; Ng, J.S. ; Tan, C.H. ; Hopkinson, M. ; David, J.P.R.

Author_Institution

Univ. of Sheffield, Sheffield

Volume

54

Issue

8

fYear

2007

Firstpage

2051

Lastpage

2054

Abstract

A systematic study of avalanche multiplication behavior in InP has been performed on a series of diodes with avalanche region widths w ranging from 2.50 to 0.08 mum. The local model for impact ionization is found to increasingly overestimate the multiplication at low electric fields as w decreases due to the presence of dead space. The suppression of the multiplication can be modeled accurately by applying a simple correction for the injected carrier dead space to the local model, which enables the multiplication to be accurately predicted over a wide range of avalanche region widths.

Keywords

III-V semiconductors; avalanche diodes; electric field effects; indium compounds; InP - Interface; dead space effect; diodes; electric fields; injected carrier dead space; low-field avalanche multiplication; Charge carrier processes; Double heterojunction bipolar transistors; Electric breakdown; Heterojunction bipolar transistors; Impact ionization; Indium phosphide; P-i-n diodes; Predictive models; Semiconductor diodes; Voltage; Breakdown; dead space; heterojunction bipolar transistors; impact ionization; multiplication;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.900010

Filename

4277985