DocumentCode
1072912
Title
Determination of shallow defect levels using thermally stimulated current in implant-layer/substrate junctions of GaAs MESFETs
Author
Sriram, S. ; Das, Mukunda B.
Author_Institution
Pennsylvania State University, University Park, PA
Volume
1
Issue
12
fYear
1980
fDate
12/1/1980 12:00:00 AM
Firstpage
253
Lastpage
255
Abstract
Thermally stimulated current measurements have been made using test samples of np- junctions formed by ion-implantation on semi-insulating substrates. The results of measurements demonstrate that in spite of a high-value series resistance of the substrate these junctions can be used for rapid identification of shallow electron traps. The trap energy levels determined for the test samples are at 0.13eV and 0.29eV below the bottom of the conduction band possibly arising due to implantation damage or induced by thermal processes.
Keywords
Alloying; Boats; Electron emission; Electron traps; Gallium arsenide; MESFETs; Nickel; Ohmic contacts; Platinum; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25310
Filename
1481172
Link To Document