DocumentCode :
1072942
Title :
Quick response field sensor using 200 MHz amorphous MI element FET multivibrator resonance oscillator
Author :
Yoshida, Yuzo ; Uchiyama, Tsuyoshi ; Mohri, Kaneo ; Ohga, Suehisa
Author_Institution :
Dept. of Electron. Control Eng., Kitakyushu Nat. Coll. of Technol., Japan
Volume :
29
Issue :
6
fYear :
1993
fDate :
11/1/1993 12:00:00 AM
Firstpage :
3177
Lastpage :
3179
Abstract :
A circumferential flux change in an amorphous wire due to a high frequency wire current induces an inductive AC voltage eL between both ends of the wire. An amplitude of eL decreases with increasing an external field Hex. This is called the magnetoinductive (MI) effect. This effect appears in a zero-magnetostrictive wire which is cold drawn and then tension annealed. A multivibrator resonance oscillator having oscillation frequencies near 200 MHz is constructed using two a-wires and two N channel junction field effect transistors with some resistors and capacitors. Small magnetic fields less than several oersteds are linearly detected by adding a bias field to each a-wire. High frequency fields up to the cut-off frequency (around 20 MHz) would be detected using the MI effect multivibrator
Keywords :
electric sensing devices; magnetic field measurement; magnetic properties of amorphous substances; magnetoelectric effects; multivibrators; oscillators; 200 MHz; FET multivibrator resonance oscillator; JFET; amorphous wire; bias field; circumferential flux change; cold drawn; high frequency fields; inductive AC voltage; magneto-inductive element; quick response field sensor; small magnetic fields detection; tension annealed; zero-magnetostrictive wire; Amorphous magnetic materials; Amorphous materials; Annealing; Cutoff frequency; FETs; Magnetic flux; Magnetic resonance; Oscillators; Voltage; Wire;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.281128
Filename :
281128
Link To Document :
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