• DocumentCode
    1072957
  • Title

    Correction to: "50-110 GHz Gunn diodes using molecular beam epitaxy."

  • Author

    Haydl, W.H. ; Smith, Roy S. ; Bosch, Ricard

  • Author_Institution
    Institut für Angewandte Festkorperphysik der Fraunhofergesellschaft, Freiburg, West Germany
  • Volume
    1
  • Issue
    12
  • fYear
    1980
  • Firstpage
    270
  • Lastpage
    270
  • Abstract
    Page 225, column 1, line 6 of the above-named work (ibid., Vol EDL-1, No. 10, pp. 224-226, 0ct. 1980), should read: "Typical threshold current values were 0.5-1.5 amps with the operating current 10-40% below this value."
  • Keywords
    Diodes; Electron beams; Gunn devices; Molecular beam epitaxial growth; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25315
  • Filename
    1481177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072957