Large-signal computer simulation of IMPATT diodes

Large-signal computer simulation of IMPATT diodes is described using a relatively straightforward approach based on generalizations to the large-signal theory of Read [1]. This permits description of the diode in terms of two nonlinear integrodifferential equations for the avalanche current and field. Results obtained from applications of the program to optimization of multifrequency operation in the case of a Si device are presented. A version of the model is also described which permits simulation of a high-efficiency GaAs device, and results from this program illustrate, and it is believed clarify, several distinctive features of large-signal operation in this type of device.