• DocumentCode
    1073085
  • Title

    Effect of anodic-oxide layer thickness on the performance of GaAs MOS solar cells

  • Author

    Mathur, P.C. ; Arora, J.D. ; Hartnagel, Hans L.

  • Author_Institution
    University of Delhi, Delhi, India
  • Volume
    28
  • Issue
    1
  • fYear
    1981
  • fDate
    1/1/1981 12:00:00 AM
  • Firstpage
    69
  • Lastpage
    71
  • Abstract
    Native oxide layers on n-type GaAs have been grown by aqueous anodic oxidation technique using AGW electrolyte. The effect of thickness of the As2O3rich interfacial oxide layer having a resistivity ~ 1014Ω . cm on the performance of GaAs MOS solar cells has been investigated. An attempt has been made to optimize the oxide layer thickness for achieving optimum efficiency.
  • Keywords
    Astrophysics; Circuits; Electrodes; Gallium arsenide; Insulation; Oxidation; Photonic band gap; Photovoltaic cells; Physics; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20284
  • Filename
    1481436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073085