DocumentCode :
1073085
Title :
Effect of anodic-oxide layer thickness on the performance of GaAs MOS solar cells
Author :
Mathur, P.C. ; Arora, J.D. ; Hartnagel, Hans L.
Author_Institution :
University of Delhi, Delhi, India
Volume :
28
Issue :
1
fYear :
1981
fDate :
1/1/1981 12:00:00 AM
Firstpage :
69
Lastpage :
71
Abstract :
Native oxide layers on n-type GaAs have been grown by aqueous anodic oxidation technique using AGW electrolyte. The effect of thickness of the As2O3rich interfacial oxide layer having a resistivity ~ 1014Ω . cm on the performance of GaAs MOS solar cells has been investigated. An attempt has been made to optimize the oxide layer thickness for achieving optimum efficiency.
Keywords :
Astrophysics; Circuits; Electrodes; Gallium arsenide; Insulation; Oxidation; Photonic band gap; Photovoltaic cells; Physics; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20284
Filename :
1481436
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1073085
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