• DocumentCode
    1073168
  • Title

    Theoretical study of a channel-doped separate gate Si MOSFET (SG-MOSFET) by two-dimensional computer simulation

  • Author

    Yamaguchi, Ken ; Takahashi, Susumu ; Kodera, Hiroshi

  • Author_Institution
    Hitachi Ltd., Kokubunji-shi, Tokyo, Japan
  • Volume
    28
  • Issue
    1
  • fYear
    1981
  • fDate
    1/1/1981 12:00:00 AM
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    A new device structure is proposed for Si MOSFET, featuring an insulated gate structure, channel doping, and finite spacing between gate and source and between gate and drain. Two-dimensional numerical analysis shows that punchthrough is suppressed and that minimum gate length, limited bypunchthrough or VTshift, is extended into the submicrometer range.
  • Keywords
    Charge carrier density; Computer simulation; Doping; Gallium arsenide; Insulation; MESFETs; MOSFET circuits; Numerical analysis; Substrates; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20292
  • Filename
    1481444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073168