• DocumentCode
    1073191
  • Title

    High-performance MOSFET—A correspondence

  • Author

    Rosenthal, Bruce D. ; Zommer, Nathan

  • Author_Institution
    Intersil, Inc., Cupertino, CA
  • Volume
    28
  • Issue
    1
  • fYear
    1981
  • fDate
    1/1/1981 12:00:00 AM
  • Firstpage
    122
  • Lastpage
    124
  • Abstract
    The limiting factors in the performance of power MOSFET´s are discussed in response to a previously published paper [1]. The limitations of diffused guard rings, use of SIPOS, RONand switching response are noted. Calculated RONand measured data are presented for VMOS and DMOS designs, which indicate the advantage of DMOS.
  • Keywords
    Electric breakdown; Electron traps; FETs; MOSFET circuits; Passivation; Power MOSFET; Predictive models; Scattering; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20294
  • Filename
    1481446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073191