Title :
High-performance MOSFET—A correspondence
Author :
Rosenthal, Bruce D. ; Zommer, Nathan
Author_Institution :
Intersil, Inc., Cupertino, CA
fDate :
1/1/1981 12:00:00 AM
Abstract :
The limiting factors in the performance of power MOSFET´s are discussed in response to a previously published paper [1]. The limitations of diffused guard rings, use of SIPOS, RONand switching response are noted. Calculated RONand measured data are presented for VMOS and DMOS designs, which indicate the advantage of DMOS.
Keywords :
Electric breakdown; Electron traps; FETs; MOSFET circuits; Passivation; Power MOSFET; Predictive models; Scattering; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20294
