• DocumentCode
    1073271
  • Title

    Monolithic microwave gallium arsenide FET oscillators

  • Author

    Joshi, J.S. ; Cockrill, J.R. ; Turner, James A.

  • Author_Institution
    Plessey Research (Caswell) Limited, Northants, England
  • Volume
    28
  • Issue
    2
  • fYear
    1981
  • fDate
    2/1/1981 12:00:00 AM
  • Firstpage
    158
  • Lastpage
    162
  • Abstract
    Results of the first monolithic microwave GaAs FET oscillator [1] are presented. The oscillator design philosophy is outlined. Design procedures for the oscillator and techniques for realization of various circuit components on the semi-insulating GaAs substrate are indicated. Performance of the oscillator is described and commented upon.
  • Keywords
    Circuit optimization; Gallium arsenide; MESFETs; Microwave FETs; Microwave devices; Microwave frequencies; Microwave oscillators; Schottky diodes; Solid state circuits; Tuning;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20303
  • Filename
    1481455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1073271