Title :
Monolithic microwave gallium arsenide FET oscillators
Author :
Joshi, J.S. ; Cockrill, J.R. ; Turner, James A.
Author_Institution :
Plessey Research (Caswell) Limited, Northants, England
fDate :
2/1/1981 12:00:00 AM
Abstract :
Results of the first monolithic microwave GaAs FET oscillator [1] are presented. The oscillator design philosophy is outlined. Design procedures for the oscillator and techniques for realization of various circuit components on the semi-insulating GaAs substrate are indicated. Performance of the oscillator is described and commented upon.
Keywords :
Circuit optimization; Gallium arsenide; MESFETs; Microwave FETs; Microwave devices; Microwave frequencies; Microwave oscillators; Schottky diodes; Solid state circuits; Tuning;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20303
