Title :
Low-frequency noise in nonlinear systems
Author :
Rudolph, Matthias ; Bonani, Fabrizio
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
fDate :
2/1/2009 12:00:00 AM
Abstract :
This paper reviews some recent achievements regarding behavior and modeling of low-frequency noise sources that have the potential to improve phase noise simulations significantly. This paper discusses a heuristic interpretation of how time-varying currents affect low-frequency noise sources, review physics-based device simulations, and then present how the sources can be implemented in commercial circuit simulators. Finally, simulations and measurements of GaAs-based heterojunction bipolar transistors (HBTs) are presented.
Keywords :
III-V semiconductors; circuit noise; gallium arsenide; heterojunction bipolar transistors; nonlinear systems; phase noise; semiconductor device models; GaAs; circuit simulators; device simulations; heterojunction bipolar transistors; low-frequency noise sources; modeling; nonlinear systems; phase noise simulations; time-varying currents; Baseband; Circuit noise; Circuit simulation; Frequency; Low-frequency noise; Noise figure; Noise level; Noise measurement; Nonlinear systems; Phase noise;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2008.930678
