DocumentCode
1073341
Title
Monolithic dual-gate GaAs FET amplifier
Author
Kumar, Mahesh ; Taylor, Gordon C. ; Huang, Ho-Chung
Author_Institution
RCA Laboratories, Princeton, NJ
Volume
28
Issue
2
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
197
Lastpage
198
Abstract
This paper presents the design, fabrication, and performance of a broad-band monolithic dual-gate GaAs FET amplifier. The amplifier has a gain of 3.5-5 dB over the 4.5- to 8-GHz band.
Keywords
Chemicals; Etching; Fabrication; Gain; Gallium arsenide; Gold; Integrated circuit noise; Microwave FETs; Resists; Sensitivity analysis;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20310
Filename
1481462
Link To Document