DocumentCode
1073365
Title
Dual-gate GaAs FET switches
Author
Vorhaus, James L. ; Fabian, Walter ; Ng, Paul B. ; Tajima, Yusuke
Author_Institution
Raytheon Research Division, Waltham, MA
Volume
28
Issue
2
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
204
Lastpage
211
Abstract
A set of multi-pole, multi-throw switch devices consisting of dual-gate GaAs FET´s is described. Included are single-pole, single-throw (SPST), double-pole, double-throw (DPDT), and single-pole four-throw (SP4T) switches. Device fabrication and measurement techniques are discussed. The device models for these switches were derived based on an equivalent circuit of a duff-gate FET. The devices were found to have substantial gain in X-band and low Ku-band.
Keywords
Fabrication; Fingers; Gallium arsenide; Low-noise amplifiers; Microwave FETs; Microwave devices; P-i-n diodes; Radio frequency; Switches; Switching circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20312
Filename
1481464
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