• DocumentCode
    1073492
  • Title

    Photoconducting film integrated in a magnetooptical multilayer structure: a new way to get bistable and unstable operations

  • Author

    Boardman, A.D. ; Voronko, A.I. ; Vetoshko, Petr M. ; Volkovoy, V.B.

  • Author_Institution
    Dept. of Phys., Salford Univ., UK
  • Volume
    29
  • Issue
    6
  • fYear
    1993
  • fDate
    11/1/1993 12:00:00 AM
  • Firstpage
    3414
  • Lastpage
    3416
  • Abstract
    TE/TM polarized light reflection from a multilayer structure containing a magnetooptic and a photoconducting film is investigated theoretically. A metal film whose thickness is chosen to support long-range surface plasmons is used. Their sharp resonance is used for tuning the whole structure. The off-diagonal elements of the dielectric tensor are ∈12=∈21=ig and these can be switched from g =0.05 to g=-0.05. Light tunneling in the photoconducting layer causes the appearance of a current that can reorient the magnetization from M to -M (g=-0.05). The switching occurs at 0.5 mW given an initial value g=0.05. The back reorientation -MM, as the light intensity is reduced, occurs at only 0.1 mW. Hence it is shown that TE reflected light will exhibit a novel bistable dependence
  • Keywords
    integrated optoelectronics; magnetic multilayers; magnetisation reversal; magneto-optical devices; metallic thin films; optical bistability; optical switches; photoconducting devices; surface plasmons; TE reflected light; TM reflected light; bistable dependence; dielectric tensor; light tunnelling; long-range surface plasmons; magnetisation reorientation; magnetooptical multilayer structure; metal film; off-diagonal elements; photoconducting film; polarized light reflection; unstable operations; Dielectrics; Magnetic multilayers; Optical films; Optical polarization; Optical reflection; Photoconductivity; Plasmons; Resonance; Tellurium; Tensile stress;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.281180
  • Filename
    281180