DocumentCode
1073492
Title
Photoconducting film integrated in a magnetooptical multilayer structure: a new way to get bistable and unstable operations
Author
Boardman, A.D. ; Voronko, A.I. ; Vetoshko, Petr M. ; Volkovoy, V.B.
Author_Institution
Dept. of Phys., Salford Univ., UK
Volume
29
Issue
6
fYear
1993
fDate
11/1/1993 12:00:00 AM
Firstpage
3414
Lastpage
3416
Abstract
TE/TM polarized light reflection from a multilayer structure containing a magnetooptic and a photoconducting film is investigated theoretically. A metal film whose thickness is chosen to support long-range surface plasmons is used. Their sharp resonance is used for tuning the whole structure. The off-diagonal elements of the dielectric tensor are ∈12=∈21=ig and these can be switched from g =0.05 to g =-0.05. Light tunneling in the photoconducting layer causes the appearance of a current that can reorient the magnetization from M to -M (g =-0.05). The switching occurs at 0.5 mW given an initial value g =0.05. The back reorientation -M → M , as the light intensity is reduced, occurs at only 0.1 mW. Hence it is shown that TE reflected light will exhibit a novel bistable dependence
Keywords
integrated optoelectronics; magnetic multilayers; magnetisation reversal; magneto-optical devices; metallic thin films; optical bistability; optical switches; photoconducting devices; surface plasmons; TE reflected light; TM reflected light; bistable dependence; dielectric tensor; light tunnelling; long-range surface plasmons; magnetisation reorientation; magnetooptical multilayer structure; metal film; off-diagonal elements; photoconducting film; polarized light reflection; unstable operations; Dielectrics; Magnetic multilayers; Optical films; Optical polarization; Optical reflection; Photoconductivity; Plasmons; Resonance; Tellurium; Tensile stress;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.281180
Filename
281180
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