DocumentCode :
1073552
Title :
Self-heating study of bulk acoustic wave resonators under high RF power
Author :
Ivira, Brice ; Fillit, René-Yves ; Ndagijimana, Fabien ; Benech, Philippe ; Parat, Guy ; Ancey, Pascal
Author_Institution :
CNRS, Grenoble
Volume :
55
Issue :
1
fYear :
2008
fDate :
1/1/2008 12:00:00 AM
Firstpage :
139
Lastpage :
147
Abstract :
The present work first provides an experimental technique to study self-heating of bulk acoustic wave (BAW) resonators under high RF power in the gigahertz range. This study is specially focused on film bulk acoustic wave resonators and solidly mounted resonators processed onto silicon wafers and designed for wireless systems. Precisely, the reflection coefficient of a one-port device is measured while up to several watts are applied and power leads to electrical drifts of impedances. In the following, we describe how absorbed power can be determined from the incident one in real time. Therefore, an infrared camera held over the radio frequency micro electromechanical system (RF-MEMS) surface with an exceptional spatial resolution reaching up to 2 mum/pixels gives accurate temperature mapping of resonators after emissivity correction. From theoretical point of view, accurate three-dimensional (3-D) structures for finite-element modeling analyses are carried out to know the best materials and architectures to use for enhancing power handling. In both experimental and theoretical investigations, comparison is made between film bulk acoustic wave resonators and solidly mounted resonators. Thus, the trend in term of material, architecture, and size of device for power application such as in transmission path of a transceiver is clearly identified.
Keywords :
acoustic resonators; bulk acoustic wave devices; emissivity; finite element analysis; micromechanical resonators; thin film devices; BAW resonators; RF power; RF-MEMS; bulk acoustic wave resonators; emissivity correction; finite-element modeling; gigahertz range; impedance; infrared camera; power application; radio frequency microelectromechanical system; reflection coefficient; self-heating study; silicon wafers; solidly mounted resonators; transceiver; wireless systems; Acoustic measurements; Acoustic reflection; Acoustic waves; Film bulk acoustic resonators; Impedance measurement; Optical films; Power measurement; Radio frequency; Semiconductor films; Silicon; Computer Simulation; Computer-Aided Design; Energy Transfer; Equipment Safety; Heat; Models, Theoretical; Radio Waves; Radiometry; Scattering, Radiation; Transducers; Ultrasonography;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2008.623
Filename :
4454309
Link To Document :
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